RN1114~RN1118
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1114,RN1115,RN1116,RN1117,RN1118
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
l With built-in bias resistors.
l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2114~2118 Unit: mm
Equivalent Circuit and Bias Resistor Values
Type No.
RN1114 RN1115 RN1116 RN1117 RN1118 R1 (kΩ) 1 2.
2 4.
7 10 47 R2 (kΩ) 10 10 10 4.
7 10
Maximum Ratings (Ta = 25°C)
Characteristic Collector-base
voltage Collector-emitter
voltage RN1114~1118 RN1114 RN1115 Emitter-base
voltage RN1116 RN1117 RN1118 Collector current Collector power dissipation Junction tempe...