RN1441~RN1444
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1441,RN1442,RN1443,RN1444
Muting And Switching Applications
l High emitter-base
voltage: VEBO = 25V (min) l High reverse hFE: reverse hFE = 150 (typ.
) (VCE = −2V, IC = −4mA) l Low on resistance: RON = 1Ω (typ.
) (IB = 5mA) l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process Unit in mm
Equivalent Circuit
JEDEC EIAJ TOSHIBA Weight: 0.
012g
TO-236MOD SC-59 2-3F1A
Maximum Ratings (Ta = 25°C)
Characteristic Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Collector power dissipation Junction temperature Storage temperatur...