RQJ0302NGDQA
Silicon P Channel MOS FET Power Switching
Features
• Low on-resistance RDS(on) = 138 mΩ typ (VGS = –10 V, ID = –1.
1 A)
• Low drive current • High speed switching • 4.
5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)
3
1 2
Note: Marking is “NG”.
Preliminary Datasheet
R07DS0294EJ0600 Rev.
6.
00
Jan 10, 2014
3 D
G 1.
Source 2 2.
Gate
3.
Drain S 1
Absolute Maximum Ratings
Item
Symbol
Drain to source
voltage Gate to source
voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation
VDSS
VGSS
ID ID(Pulse) Note1
IDR Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1.
PW ≤ 10 μs, duty cycle ...