RQJ0306FQDQA
Silicon P Channel MOS FET Power Switching
Features
• Low gate drive VDSS : –30 V and 2.
5 V gate drive
• Low drive current • High speed switching • Small traditional package (MPAK)
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)
3
1 2
Notes: Marking is "FQ".
Preliminary Datasheet
R07DS0298EJ0300 Rev.
3.
00
Jan 10, 2014
3 D
2 G
S 1
1.
Source 2.
Gate 3.
Drain
Absolute Maximum Ratings
Item
Symbol
Drain to source
voltage Gate to source
voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation
VDSS
VGSS
ID ID(pulse) Note1
IDR Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1.
PW ≤ 10 μs, Duty cycl...