RSA6.
1J4
Diodes
ESD Protection diode
RSA 6.
1J4
zApplication ESD protection zExternal dimensions (Units : mm)
0.
2 + − 0.
1
1.
6 + − 0.
1 (3) 0.
22 + − 0.
05 (1) (2) 0.
5 + − 0.
05
1.
2 + − 0.
1 1.
6 + − 0.
1
zConstruction Silicon epitaxial planar
0.
5 0.
5 1.
0 + − 0.
1
0.
2 + − 0.
1
ROHM : EMD5 EMD5
zCircuit
zAbsolute maximum ratings (Ta=25°C)
Parameter Peak pulse power-1 (tp=10×1000µs) Peak pulse power-2 (tp=8×20µs) Junction temperature Storage temperature Symbol
Ppk Ppk
Limits 10 80 150 −55 to +150
Tj Tstg
zElectrical characteristics (Ta=25°C) ∗ Rating of per diode.
Parameter Zener
voltage Reverse current Forward
voltage Junction capacitance Symbol VZ IR VF Ct Min.
6.
10 − − − Typ.
− − − 35 Max.
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