RU1HE3D
N-Channel Advanced Power
MOSFET
MOSFET
Features
• 100V/3A, RDS (ON) =130mΩ (Typ.
) @ VGS=10V RDS (ON) =140mΩ (Typ.
) @ VGS=4.
5V
• ESD Protected
• Reliable and Rugged
• Ultra Low On-Resistance
• 100% avalanche tested
• Lead Free and Green Available
Pin Description
SOT-223
Applications
• Power Management
N-Channel
MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source
Voltage
VGSS
Gate-Source
Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink
IDP
300μs Pulse Drain Current Tested
TC=25°C
ID
Continuous Drain Current(VG...