RU1HL13R
P-Channel Advanced Power
MOSFET
MOSFET
Features
• -100V/-13A, RDS (ON) =160mΩ(tpy.
)@VGS=-10V RDS (ON) =180mΩ(tpy.
)@VGS=-4.
5V
• Super High Dense Cell Design
• ESD protected
• Reliable and Rugged
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
Applications
• Power Management • DC/DC Converters
Pin Description
TO-220
Absolute Maximum Ratings
P-Channel
MOSFET
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source
Voltage
VGSS
Gate-Source
Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested
ID ...