RU2560L
N-Channel Advanced Power
MOSFET
MOSFET
Features
• 25V/55A, RDS (ON) =8mΩ(Typ.
)@VGS=10V RDS (ON) =12mΩ(Typ.
)@VGS=4.
5V
• Super High Dense Cell Design
• Reliable and Rugged
• Fast Switching and Fully Avalanche Rated
• Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
TO252
Applications
• Power Management in Desktop Computer, Portable Equipment and DC/DC Converters.
N-Channel
MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source
Voltage
VGSS
Gate-Source
Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP ...