RU30120S
N-Channel Advanced Power
MOSFET
Features
• 30V/120A,
RDS (ON) =2.
5mΩ(Typ.
)@VGS=10V RDS (ON) =3.
3mΩ(Typ.
)@VGS=4.
5V
• Super High Dense Cell Design • Ultra Low On-Resistance • 100% Avalanche Tested • Lead Free and Green Devices Available (RoHS Compliant)
Applications
• DC-DC Converters
Pin Description
D
G S
TO263
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source
Voltage
VGSS
Gate-Source
Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
①
IDP
300μs Pulse Drain Current Tested
②
ID
Continuous Drain Current(VGS=10V)
PD Maximum...