RU30291R
N-Channel Advanced Power
MOSFET
MOSFET
Features
• 30V/290A, RDS (ON) =1.
8mΩ(Typ.
)@VGS=10V RDS (ON) =2.
6mΩ(Typ.
)@VGS=4.
5V
• Super High Dense Cell Design
• Ultra Low On-Resistance
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
TO-220
Applications
• DC-DC Converters and Off-line UPS • Switching Applications
N-Channel
MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source
Voltage
VGSS
Gate-Source
Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink IDP 300μs Pulse Drain Cur...