RU3080M
N-Channel Advanced Power
MOSFET
Features
• 30V/80A, RDS (ON) =2.
3mΩ(Typ.
)@VGS=10V RDS (ON) =3mΩ(Typ.
)@VGS=4.
5V
• Super High Dense Cell Design
• Reliable and Rugged
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
PDFN5060
Applications
• DC/DC Conversion • Switching Application
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source
Voltage
VGSS
Gate-Source
Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current(VGS=10V)
PD Maxi...