RU3568R
N-Channel Advanced Power
MOSFET
MOSFET
Features
• 30V/68A, RDS (ON) =6mΩ(Typ.
)@VGS=10V RDS (ON) =10mΩ(Typ.
)@VGS=4.
5V
• Super High Dense Cell Design
• Ultra Low On-Resistance
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
Applications
• DC-DC Converters
Pin Description
TO-220
N-Channel
MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source
Voltage
VGSS
Gate-Source
Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current(VGS=10V)...