RU602B
N-Channel Advanced Power
MOSFET
Features
• 60V/1.
5A,
RDS (ON) =220mΩ(Typ.
)@VGS=10V
• Low RDS (ON) • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant)
Applications
• DC/DC Converter • Battery Switch
Pin Description
D
G S
SOT23
D G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source
Voltage
VGSS
Gate-Source
Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
①
IDP
300μs Pulse Drain Current Tested
②
ID
Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC RθJA③...