RU60E16L
N-Channel Advanced Power
MOSFET
MOSFET
Features
• 60V/16A, RDS (ON) =60mΩ(Typ.
)@VGS=10V RDS (ON) =75mΩ(Typ.
)@VGS=4.
5V
• Super High Dense Cell Design
• ESD protected
• Reliable and Rugged
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
Applications
• Power Management
Pin Description
TO252
N-Channel
MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source
Voltage
VGSS
Gate-Source
Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current(VG...