RU60E25K
N-Channel Advanced Power
MOSFET
Features
• 60V/25A, RDS (ON) =30mΩ(Typ.
)@VGS=10V RDS (ON) =40mΩ(Typ.
)@VGS=4.
5V • ESD protected • Reliable and Rugged • Fast Switching Speed • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant)
Applications
• Power Management in Desktop Computer, Portable Equipment • DC/DC Converters
Pin Description
G DS TO251
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS VGSS
TJ TSTG
IS
Drain-Source
Voltage Gate-Source
Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP①
300μs Pulse Drain Current Tested
ID②...