RU8205C6
N-Channel Advanced Power
MOSFET
Features
• 20V/6A, RDS (ON) =18mΩ(Typ.
)@VGS=4.
5V RDS (ON) =23mΩ(Typ.
)@VGS=2.
5V • Low RDS (ON) • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant)
Applications
• Power Management
Pin Description
G2 D1/D2
G1
S2 D1/D2 S1
SOT23-6
D1
D2
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS VGSS
TJ TSTG
IS
Drain-Source
Voltage Gate-Source
Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP①
300μs Pulse Drain Current Tested
ID② Continuous Drain Current(VGS=4.
5V)
PD Maxim...