RU8205G
N-Channel Advanced Power
MOSFET
MOSFET
Features
• 20V/6A, RDS (ON) =21mΩ (Typ.
) @ VGS=4.
5V RDS (ON) =30mΩ (Typ.
) @ VGS=2.
5V
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free and Green Available
Pin Description
TSSOP-8
Applications
• Power Management
Absolute Maximum Ratings
Dual N-Channel
MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source
Voltage
VGSS
Gate-Source
Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TA=25°C
Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested
TA=25°C
ID
PD
②
RθJA
TA=25°C Continuous Drain Current(VGS=4.
5V)
TA=70°C
...