LESHAN RADIO COMPANY, LTD.
30V P-Channel Enhancement-Mode
MOSFET
LP3401LT1G S-LP3401LT1G
VDS (V) = -30V
RDS(ON) 70mΩ (VGS = -10V) RDS(ON) 80mΩ (VGS = -4.
5V) RDS(ON) 120mΩ (VGS = -2.
5V)
FEATURES Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
ORDERING INFORMATION
Device
LP3401LT1G S-LP3401LT1G
LP3401LT3G S-LP3401LT3G
Marking
A1
A1
Shipping
3000/Tape&Reel
10000/Tape&Reel
3
1 2
SOT– 23 (TO–236AB)
3D
G 1 S 2
MAXIMUM RATINGS (TA = 25oC unless otherwise noted)
Parameter Drain-Source
Voltage
Gate-Source ...