SI-TECH SEMICONDUCTOR CO.
,LTD S10H06R/S
N-Channel
MOSFET
Features
█ 100V,60A,Rds(on)(typ)=15mΩ @Vgs=10V █ High Ruggedness █ Fast Switching █ 100% Avalanche Tested █ Improved dv/dt Capability
General Description
This Power
MOSFET is produced using Si-Tech’s advanced Trench MOS Technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
These devices are well suited for low
voltage application such as automotive,DC/DC converters,and high efficiency switch for power management in portable and battery products.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM VGS EAS
PD
TJ TSTG
Drain-Source
Voltage Conti...