Syn
cMOS Technologies Inc.
S29C51004T/S29C51004B
4 MEGABIT (524,288 x 8 BIT) 5 VOLT
CMOS FLASH MEMORY
Features
s s s s s s 512Kx8-bit Organization Address Access Time: 70, 90, 120 ns Single 5V ± 10% Power Supply Sector Erase Mode Operation 16KB Boot Block (lockable) 1K bytes per Sector, 512 Sectors – Sector-Erase Cycle Time: 10ms (Max) – Byte-Write Cycle Time: 35µs (Max) Minimum 10,000 Erase-Program Cycles Low power dissipation – Active Read Current: 20mA (Typ) – Active Program Current: 30mA (Typ) – Standby Current: 100 µA (Max) Hardware Data Protection Low VCC Program Inhibit Below 3.
5V Self-timed write/erase operations with end-of-cycle detection – DATA Polling – Toggle Bit
CMOS and TTL I...