SI-TECH SEMICONDUCTOR CO.
,LTD S60N12R
N-Channel
MOSFET
Features
60V, 120A,Rds(on)(typ)=6.
5mΩ @Vgs=10V High Ruggedness Fast Switching 100% Avalanche Tested Improved dv/dt Capability
General Description
This Power
MOSFET is produced using Si-Tech’s advanced Trench MOS Technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
These devices are well suited for low
voltage application such as automotive,DC/DC converters,and high efficiency switch for power management in portable and battery products.
Absolute Maximum Ratings
Symbol
Param eter
VDS S
ID ID M V GS EAS
PD TJ TS TG
Drain-Source
Voltage ...