| Part Number | S6204 |
| Manufacturer | Rohm |
| Title | SiC Schottky Barrier Diode Bare Die |
| Description | S6204 SiC Schottky Barrier Diode Bare Die VR 650V IF 8A*1 QC 13nC lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-sp... |
| Features |
1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible
lInner circuit
(C)
(A)
lConstruction Silicon carbide epitaxial planer type Schottky diode
Data Sheet
(C) Cathode (A) Anode
lAbsolute maximum ratings (Tj = 25°C) Parameter
Symbol
Value
Reverse voltage (... |
| File Size | 342.75KB |
| Datasheet |
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S6207 : S6207 SiC Schottky Barrier Diode Bare Die VR 650V IF 15A*1 QC 23nC lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lInner circuit (C) (A) lConstruction Silicon carbide epitaxial planer type Schottky diode Data Sheet (C) Cathode (A) Anode lAbsolute maximum ratings (Tj = 25°C) Parameter Symbol Value Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Surge no repetitive forward current Repetitive peak forward current Junction temperature VRM 650 VR 650 IF 15*1 55*2 IFSM 200*3 43*4 IFRM 61*5 Tj 175 Range of storage temperature Tstg -55 to +175 *1 Limited by Tj *2 PW=8.3ms sinusoidal, Tj=25°.
S6205 : S6205 SiC Schottky Barrier Diode Bare Die VR 650V IF 12A*1 QC 18nC lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lInner circuit (C) (A) lConstruction Silicon carbide epitaxial planer type Schottky diode Data Sheet (C) Cathode (A) Anode lAbsolute maximum ratings (Tj = 25°C) Parameter Symbol Value Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Surge no repetitive forward current Repetitive peak forward current Junction temperature VRM 650 VR 650 IF 12*1 45*2 IFSM 170*3 36*4 IFRM 49*5 Tj 175 Range of storage temperature Tstg -55 to +175 *1 Limited by Tj *2 PW=8.3ms sinusoidal, Tj=25°.
S6203 : S6203 SiC Schottky Barrier Diode Bare Die VR 650V IF 20A*1 QC 31nC lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lInner circuit (C) (A) lConstruction Silicon carbide epitaxial planer type Schottky diode Data Sheet (C) Cathode (A) Anode lAbsolute maximum ratings (Tj = 25°C) Parameter Symbol Value Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Surge no repetitive forward current Repetitive peak forward current Junction temperature VRM 650 VR 650 IF 20*1 71*2 IFSM 260*3 56*4 IFRM 76*5 Tj 175 Range of storage temperature Tstg -55 to +175 *1 Limited by Tj *2 PW=8.3ms sinusoidal, Tj=25.
S6202 : S6202 SiC Schottky Barrier Diode Bare Die VR 650V IF 10A*1 QC 15nC lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lInner circuit (C) (A) Data Sheet (C) Cathode (A) Anode lConstruction Silicon carbide epitaxial planer type Schottky diode lAbsolute maximum ratings (Tj = 25°C) Parameter Symbol Value Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Surge no repetitive forward current Repetitive peak forward current Junction temperature VRM 650 VR 650 IF 10*1 40*2 IFSM 150*3 31*4 IFRM 41*5 Tj 175 Range of storage temperature Tstg -55 to +175 *1 Limited by Tj *2 PW=8.3ms sinusoidal, Tj=25°.