isc Thyristors
S8008R
DESCRIPTION ·With TO-220 Non-isolated packaging ·Glass passivated junctions and center gate fire for greater
parameter uniformity and stability ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM Repetitive peak off-state
voltage
VRRM Repetitive peak reverse
voltage
IT(RMS) RMS on-state current
ITSM Surge non-repetitive on-state current
PG(AV) Tj Tstg
Average gate power dissipation Operating junction temperature Storage temperature
50Hz 60Hz
MIN
800 800
8 83 100 0.
5 -40~125
-40~150
UNIT
V V A
A
W ℃ ℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL...