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S9014W

Part Number S9014W
Manufacturer HOTTECH
Title NPN Transistor
Description Plastic-Encapsulate Transistors FEATURES Complementary To S9015W. Excellent HFE Linearity. Power dissipation.(P C=0.2W) Marking:J6 MAXIMUM RATI...
Features Complementary To S9015W. Excellent HFE Linearity. Power dissipation.(P C=0.2W) Marking:J6 MAXIMUM RATINGS (TA=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Storage Temperature unless otherwise noted) S...

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S9014W : Silicon Epitaxial Planar Transistor FEATURES z Complementary To S9015W. z Excellent HFE Linearity. z Power dissipation.(PC=0.2W) Pb Lead-free APPLICATIONS z Per-Amplifier low level & low noise. ORDERING INFORMATION Type No. Marking S9014W J6 Production specification S9014W SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 50 VCEO Collector-Emitter Voltage 45 VEBO Emitter-Base Voltage 5 IC Collector Current -Continuous 100 PC Collector Dissipation 200 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ F059 Rev.A www.gmicroelec.com 1 Production specification .

S9014W : S901 4W TRANSISTOR(NPN) FEATURES  Complementary to S9015W  Small Surface Mount Package SOT–323 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage 50 VCEO Collector-Emitter Voltage 45 VEBO Emitter-Base Voltage 5 IC Collector Current 100 PC Collector Power Dissipation 200 RΘJA Thermal Resistance From Junction To Ambient 625 Tj Junction Temperature Tstg Storage Temperature 150 -55~+150 Unit V V V mA mW ℃/W ℃ ℃ 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC=100µA, IE=0 Collector-emitter breakd.

S9014W : SOT-323 Plastic-Encapsulate Transistors S9014W TRANSISTOR (NPN) FEATURES  Complementary to S9015W  Small Surface Mount Package SOT–323 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage 50 VCEO Collector-Emitter Voltage 45 VEBO Emitter-Base Voltage 5 IC Collector Current 100 PC Collector Power Dissipation 200 RΘJA Thermal Resistance From Junction To Ambient 625 Tj Junction Temperature Tstg Storage Temperature 150 -55~+150 Unit V V V mA mW ℃/W ℃ ℃ 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO I.

S9014W : Elektronische Bauelemente S9014W NPN Silicon Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE Complementary to S9015W PACKAGING INFORMATION Weight: 0.0074 g MARKING CODE J6 1 Base Collector 3 2 Emitter SOT-323 A L 3 Top View CB 12 KE 1 D F GH 3 2 J REF. A B C D E F Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.20 1.40 0.20 0.40 REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 -0.650 TYP. ABSOLUTE MAXIMUM RATINGS (at TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current – Continuous Collec.




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