NDF11N50Z, NDP11N50Z N-Channel Power
MOSFET 500 V, 0.
52 W
Features
• • • •
Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant
VDSS 500 V Rating Drain−to−Source
Voltage Continuous Drain Current, RqJC Continuous Drain Current TA = 100°C, RqJC Pulsed Drain Current, VGS @ 10 V Power Dissipation, RqJC (Note 1) Gate−to−Source
Voltage Single Pulse Avalanche Energy, ID = 10.
5 A ESD (HBM) (JESD22−A114) RMS Isolation
Voltage (t = 0.
3 sec.
, R.
H.
≤ 30%, TA = 25°C) (Figure 14) Peak Diode Recovery Continuous Source Current (Body Diode) Maximum Temperature for Soldering Leads Operating Junction and Storage Temperature Range Symbol VDSS ID ID IDM PD VG...