SCH1435
Power
MOSFET 30V, 89mΩ, 3A, Single N-Channel
This low-profile high-power
MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance.
This device is suitable for applications with low gate charge driving or ultra low on resistance requirements.
Features • Low On-Resistance • 1.
8V drive • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS compliance • Ultra small package SCH6 (1.
6mm×1.
6mm×0.
56mmt)
Typical Applications • Load Switch
SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1)
Parameter
Symbol
Value
Unit
Drain to Source
Voltage
VDSS
30 V
Gate to Source
Voltage
VGSS
...