SENSITRON SEMICONDUCTOR
TECHNICAL DATA DATASHEET 1137, REV.
D
SCP-4979
HV IGBT Solid-State Switch Data Sheet
DESCRIPTION: 12000 VOLT, 1.
0 AMP, INDUSTRIAL IGBT Solid-state Switch ELECTRICAL CHARACTERISTICS
PARAMETER
Collector-to-Emitter Breakdown
Voltage for each one of Q1,2,3,4 Collector-to-Emitter Leakage Current
(AT Tj=250C UNLESS OTHERWISE SPECIFIED)
CONDITION
V GE =0V,IC=0.
5 mA, Tj = 25 oC V GE =0V, V CE=2500V, Tj = 25 oC V CE=2000V, Tj = 125 oC(1) V GE =10V TC = 25 oC V CE = V GE IC = 1mA V CE = 25 V V GE = 15 V, IC = 2.
0 A
SYMBOL
V (BR)CES ICES
MI N
2900(1) -
TYP
-
MAX
0.
5 2 1 (2) 100 7.
5 0.
8 1.
0 19.
0 12.
5 100 100 10000
UNIT
V mA A A V nF V
o
Continuous Collector Current Maximu...