SCT50N120
Silicon carbide Power
MOSFET 1200 V, 65 A, 59 mΩ (typ.
, TJ=150 °C) in an HiP247™ package
Datasheet - production data
Features
Very tight variation of on-resistance vs.
temperature
Very high operating junction temperature capability (TJ = 200 °C)
Very fast and robust intrinsic body diode Low capacitance
Applications
Figure 1: Internal schematic diagram
Solar inverters, UPS Motor drives High
voltage DC-DC converters Switch mode power supplies
D(2, TAB)
G(1)
S(3)
AM01475v1_noZen
Description
This silicon carbide Power
MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials.
This results in unsurpassed on-resistance per unit ...