SDU/D20N03L
SamHop Microelectronics Corp.
July 2004 ver1.
2
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS 30V
ID RDS(ON) ( m W ) Max
15 @ VGS = 10V 35A
32 @ VGS = 4.
5V
FEATURES Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 and TO-251 Package.
D
G S
SDU SERIES TO-252AA(D-PAK)
GDS
SDD SERIES TO-251(l-PAK)
D
G S
ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted)
Parameter Drain-Source
Voltage Gate-Source
Voltage
Drain Current-Continuous @TJ=125 C -Pulsed a
Drain-Source Diode Forward Current
Symbol VDS VGS ID IDM IS
Limit 30 20 35 87 20
Unit V V A A A
Maximum Power Dissipation @Tc=25 C Operating and Storage T...