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SemiWell Semiconductor
SFD30N06
N-Channel
MOSFET
Features
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Low RDS(on) (0.
04Ω )@VGS=10V Gate Charge (Typical 27nC) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range (150°C)
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General Description
This Power
MOSFET is produced using SemiWell’s advanced planar stripe, DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics.
This Power
MOSFET is well suited for synchronous DC-DC Converters and Power Management in portable and battery ...