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Advanced Power
MOSFET
FEATURES
! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge o ! 175 C Operating Temperature ! Extended Safe Operating Area ! Lower Leakage Current : 10 µA (Max.
) @ VDS = -100V ! Lower RDS(ON) : 0.
161 Ω (Typ.
)
SFF9140
BVDSS = -100 V RDS(on) = 0.
2 Ω ID = -13.
2 A
TO-3PF
1 2 3
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source
Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source
Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitiv...