Advanced Power
MOSFET
FEATURES
ν Avalanche Rugged Technology ν Rugged Gate Oxide Technology ν Lower Input Capacitance ν Improved Gate Charge ν Extended Safe Operating Area ν 175 C Operating Temperature ν Lower Leakage Current : 10 µA (Max.
) @ VDS = -100V ν Lower RDS(ON) : 0.
161 Ω (Typ.
)
o
SFH9140
BVDSS = -100 V RDS(on) = 0.
2 Ω ID = -19 A
TO-3P
1 2 3
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source
Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source
Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak ...