Advanced Power
MOSFET
FEATURES
ν Avalanche Rugged Technology ν Rugged Gate Oxide Technology ν Lower Input Capacitance ν Improved Gate Charge ν Extended Safe Operating Area ν Lower Leakage Current : 10 µA (Max.
) @ VDS = -250V ν Lower RDS(ON) : 3.
5 Ω (Typ.
)
SFM9214
BVDSS = -250 V RDS(on) = 4.
0 Ω ID = -0.
45 A
SOT-223
2
1 3
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source
Voltage Continuous Drain Current (TA=25 C) Continuous Drain Current (TA=70 C) Drain Current-Pulsed Gate-to-Source
Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
o Total P...