Advanced Power
MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge 175 C Opereting Temperature Extended Safe Operating Area Lower Leakage Current : -10 µA (Max.
) @ VDS = -60V Low RDS(ON) : 0.
22 Ω (Typ.
)
1 2 3
SFP2955
BVDSS = -60 V RDS(on) = 0.
3 Ω ID = -9.
4 A
TO-220
o
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source
Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source
Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/...