Advanced Power
MOSFET
FEATURES
n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge o n 175 C Opereting Temperature n Extended Safe Operating Area n Lower Leakage Current : -10 µA (Max.
) @ VDS = -100V n Low RDS(ON) : 0.
444 Ω (Typ.
)
SFP9520
BVDSS = -100 V RDS(on) = 0.
6 Ω ID = -6 A
TO-220
1 2 3
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source
Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source
Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak D...