Advanced Power MOSFET
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -200V Low RDS(ON) : 0.581 Ω (Typ.) 1 SFW/I9630 BVDSS = -200 V RDS(on) = 0.8 Ω ID = -6.5 A D2-PAK 2 I2-PAK 1 3 2 3 1. Gate 2. Drain 3. Source Absolut...
Fairchild Semiconductor