Advanced Power
MOSFET
FEATURES
n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175 C Operating Temperature n Lower Leakage Current : 10 µA (Max.
) @ VDS = -60V n Low RDS(ON) : 0.
206 Ω (Typ.
)
1
SFW/I9Z24
BVDSS = -60 V RDS(on) = 0.
28 Ω ID = -9.
7 A
D2-PAK
2
o
I2-PAK
1 3 2 3
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source
Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source
Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy P...