Ordering number : ENN*0000
SGF9
N-Channel GaAs MESFET
SGF9
For C to X-band Local Oscillator and Amplifier
Preliminary Features
•
Package Dimensions
unit : mm 0000
[SGF9]
3
•
•
Mold package-owing to the cross-mold technology, this product can maintain the same performance as the ceramic package.
The chip surface is covered with the highly reliable protection film.
Automatic surface mounting is available.
.
05 ±0 1.
8
0.
5 ±0.
05
2
1.
8 ±0 .
05
2
1 0.
4
+0.
1 0.
1 --0.
015
±0.
02
0 to 0.
1
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source
Voltage Gate-to-Source
Voltage Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDS VGS...