Product Description
Stanford Microdevices’ SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package.
HFET technology improves breakdown
voltage while minimizing Schottky leakage current for higher power added efficiency and improved linearity.
Output power at 1dB compression for the SHF-0289 is +30dBm when biased for Class AB operation at 8V and 250mA.
The +46 dBm third order intercept makes it ideal for high dynamic range, high intercept point requirements.
They are well suited for use in both analog and digital wireless communication infrastructure and subscriber equipment including cellular PCS, CDPD, wireless data, and pagers.
Adeq...