Si2305DS
Vishay Siliconix
P-Channel 1.
25-W, 1.
8-V (G-S)
MOSFET
PRODUCT SUMMARY
VDS (V)
–8 8
rDS(on) (W)
0.
052 @ VGS = –4.
5 V 0.
071 @ VGS = –2.
5 V 0.
108 @ VGS = –1.
8 V
ID (A)
"3.
5 "3 "2
TO-236 (SOT-23)
G 1 3 S 2 D
Top View Si2305DS (A5)* *Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipation)a, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
Limit
–8 "8 "3.
5 "2.
8 "12 –1.
6 1.
25 0.
8 –55 to 150
Unit
V
A
W ...