Si2306DS
Vishay Siliconix
N-Channel 30-V (D-S)
MOSFET
PRODUCT SUMMARY
VDS (V)
30
FEATURES
ID (A)
3.
5 2.
8
rDS(on) (W)
0.
057 @ VGS = 10 V 0.
094 @ VGS = 4.
5 V
D TrenchFETr Power
MOSFET D 100% Rg Tested
-
TO-236 (SOT-23)
G
1 3 D
S
2
Top View Si2306DS (A6)* *Marking Code Ordering Information: Si2306DS-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
Limit...