Si2309DS
Vishay Siliconix
P-Channel 60-V (D-S)
MOSFET
PRODUCT SUMMARY
VDS (V)
-60
rDS(on) (W)
0.
340 @ VGS = -10 V 0.
550 @ VGS = -4.
5 V
ID (A)
- 1.
25 -1
TO-236 (SOT-23)
G
1 3 D
S
2
Top View Si2309DS (A9)* *Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Avalanche Current Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range L = 0.
1 mH TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 100_C ID -0.
85 IDM IAS -8 -5 1.
25 0.
8 -55 to 150 W _C A
Symbol
VDS VGS
Limit
-60 "20 -1.
25
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
t v ...