Si2327DS
New Product
Vishay Siliconix
com
P-Channel 200-V (D-S)
MOSFET
PRODUCT SUMMARY
VDS (V)
−200
FEATURES
ID (A)
−0.
49 −0.
48
rDS(on) (W)
2.
35 @ VGS = −10 V 2.
45 @ VGS = −6.
0 V
Qg (Typ)
80 8.
0
D TrenchFETr Power
MOSFET D Ultra Low On-Resistance D Small Size
APPLICATIONS
D Active Clamp Circuits in DC/DC Power Supplies
TO-236 (SOT-23)
G 1 3 S 2 D Ordering Information: Si2327DS -T1—E3
Top View Si2327DS (D7)* *Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Single-Pluse Avalanche Cu...