N-Channel 30 V (D-S)
MOSFET
Si2336DS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.
042 at VGS = 4.
5 V
30
0.
046 at VGS = 2.
5 V
0.
052 at VGS = 1.
8 V
TO-236 (SOT-23)
ID (A)a 5.
2 4.
9 4.
1
Qg (Typ.
) 5.
7 nC
G1 S2
3D
FEATURES • TrenchFET® Power
MOSFET
• 100 % Rg Tested • Material categorization:
For definitions of compliance please see www.
vishay.
com/doc?99912
APPLICATIONS
• DC/DC Converters
D
• Boost Converters
G
Top View Si2336DS (N4)* * Marking Code
Ordering Information: Si2336DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source
Voltage Gate-Source V...