Si3460DV
Vishay Siliconix
N-Channel 20-V (D-S)
MOSFET
PRODUCT SUMMARY
VDS (V)
20
FEATURES
ID (A)
6.
8 6.
3 5.
7
rDS(on) (W)
0.
027 @ VGS = 4.
5 V 0.
032 @ VGS = 2.
5 V 0.
038 @ VGS = 1.
8 V
D TrenchFETr Power
MOSFET D 100% Rg Tested
TSOP-6 Top View
1 3 mm 6 5 (3) G 3 4
(1, 2, 5, 6) D
2
2.
85 mm (4) S Ordering Information: Si3460DV-T1 N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VG...