Si3900DV
Vishay Siliconix
Dual N-Channel 20-V (D-S)
MOSFET
PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.
125 @ VGS = 4.
5 V 0.
200 @ VGS = 2.
5 V
ID (A)
2.
4 1.
8
D1
D2
TSOP-6 Top View
G1 1 6 D1
3 mm
S2
2
5
S1
G1
G2
G2
3
4
D2
2.
85 mm
S1 N-Channel
MOSFET
S2 N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C TA = 25_C TA = 85_C
Symbol
VDS VGS
5 sec
20
Steady State
"12
Unit
V
2.
4 ID I...