Si4880DY
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching
MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30 0.
0085 at VGS = 10 V 0.
014 at VGS = 4.
5 V
ID (A) ± 13 ± 10
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power
MOSFETS • High-Efficiency • PWM Optimized • Compliant to RoHS Directive 2002/95/EC
S1 S2 S3 G4
SO-8 Top View
8D 7D 6D 5D
Ordering Information: Si4880DY-T1-E3 (Lead (Pb)-free) Si4880DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G N-Channel
MOSFET
S
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Continuous Drain Current (TJ = 150 °C)a, b Pulsed Drain C...