Si4967DY
Vishay Siliconix
Dual P-Channel 1.
8-V (G-S)
MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.
023 at VGS = - 4.
5 V - 12 0.
030 at VGS = - 2.
5 V
0.
045 at VGS = - 1.
8 V
ID (A) - 7.
5 - 6.
7 - 5.
4
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power
MOSFETs: 1.
8 V Rated • Compliant to RoHS Directive 2002/95/EC
S1 1 G1 2 S2 3 G2 4
SO-8
8 D1 7 D1 6 D2 5 D2
Top View
Ordering Information: Si4967DY-T1-E3 (Lead (Pb)-free) Si4967DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1 G1
D1 P-Channel
MOSFET
S2 G2
D2 P-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Con...