Si5855DC
Vishay Siliconix
P-Channel 1.
8 V (G-S)
MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.
110 at VGS = - 4.
5 V - 20 0.
160 at VGS = - 2.
5 V
0.
240 at VGS = - 1.
8 V
ID (A) - 3.
6 - 3.
0 - 2.
4
SCHOTTKY PRODUCT SUMMARY
VKA (V) 20
Vf (V) Diode Forward
Voltage
0.
375 V at 1 A
IF (A) 1.
0
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • TrenchFET® Power
MOSFETs • Ultra Low Vf Schottky • Si5853DC Pin Compatible • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS • Charging Circuit in Portable Devices
1206-8 ChipFET®
1
A
KA
K D D
S G
Marking Code
JB XXX Lot Traceability and Date Code
Part # Code Bottom View
Ordering Information: Si5855DC-T...