Si6802DQ
Vishay Siliconix
N-Channel, Reduced Qg, Fast Switching
MOSFET
PRODUCT SUMMARY
VDS (V)
20 com
rDS(on) (W)
0.
075 @ VGS = 4.
5 V 0.
110 @ VGS = 3.
0 V
ID (A)
"3.
3 "2.
7
D
TSSOP-8
D S S G 1 2 3 4 Top View S* N-Channel
MOSFET D 8 D S S D *Source Pins 2, 3, 6, and 7 must be tied common.
G
Si6802DQ
7 6 5
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C ID IDM IS PD TJ, Tstg
Symbol
VDS VGS
...